t-max ? to-264 maximum ratings all ratings: t c = 25c unless otherwise specified. 050-7147 rev f 6-2006 g d s caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. "coolmos ? comprise a new family of transistors developed by infineon technologies ag. "coolmos" is a trade- mark of infineon technologies ag" super junction mosfet c power semiconductors o o l mos ultra low r ds ( on ) low miller capacitance ultra low gate charge, q g avalanche energy rated popular t-max? or to-264 package apt34n80b2c3 (g) apt34n80lc3 (g) 800v 34a 0.145 ?? ?? ? characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 500a) drain-source on-state resistance 2 (v gs = 10v, i d = 22a) zero gate voltage drain current (v ds = 800v, v gs = 0v) zero gate voltage drain current (v ds = 800v, v gs = 0v, t j = 150c) gate-source leakage current (v gs = 20v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 2ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l dv / dt i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. drain-source voltage slope (v ds = 640v, i d = 34a, t j = 125c) repetitive avalanche current 7 repetitive avalanche energy 7 single pulse avalanche energy 4 unit volts amps volts watts w/c c v/ns amps mj static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms ana volts min typ max 800 0.125 0.145 1.0 50 500 200 2.10 3 3.9 apt34n80b2c3_lc3 800 34 102 2030 417 3.33 -55 to 150 300 5017 0.5 670 microsemi website - http://www.microsemi.com unless stated otherwise, microsemi discrete mosfets contain a single mosfet die. this device is made withtwo parallel mosfet die. it is intended for switch-mode operation. it is not suitable for linear mode operation. *g denotes rohs compliant, pb free terminal finish. downloaded from: http:///
dynamic characteristics apt34n80b2c3 _lc3(g) 050-7147 rev f 6-2006 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 115.92mh, r g = 25 ? , peak i l = 3.4a 5 i s = - 34a di / dt = 100a/s v r = 480v t j = 125 c 6 eon includes diode reverse recovery. see figures 18, 20. 7 repetitve avalanche causes additional power losses that can be calculated as p av =e ar *f microsemi reserves the right to change, without notice, the specifications and information contained herein. characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = - 34a ) reverse recovery time (i s = - 34a , dl s /dt = 100a/s, v r = 400v) reverse recovery charge (i s = - 34a , dl s /dt = 100a/s, v r = 400v) peak diode recovery dv / dt 5 unit amps volts ns c v/ns min typ max 34 102 1 1.2 855 30 6 symbol r jc r ja min typ max .30 40 unitc/w characteristicjunction to case junction to ambient symbol i s i sm v sd t rr q rr dv / dt symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 6 turn-off switching energyturn-on switching energy 6 turn-off switching energy test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 400v i d = 34a @ 25c resistive switching v gs = 10v v dd = 400v i d = 34a @ 125c r g = 2.5 ? inductive switching @ 25c v dd = 533v, v gs = 15v i d = 34a, r g = 5 ? inductive switching @ 125c v dd = 533v, v gs = 15v i d = 34a, r g = 5 ? min typ max 45102050 110 180 355 2290 25 15 70 80 69 675580 1145 670 unit pf nc ns j source-drain diode ratings and characteristics thermal characteristics note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm single pulse z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.350.30 0.25 0.20 0.15 0.10 0.05 0 0.5 0.1 0.3 0.7 0.9 0.05 downloaded from: http:///
4.5v 5v 5.5v 4v v gs =15 & 10v 6v 6.5v apt34n80b2c3 _lc3(g) v ds , drain-to-source voltage (volts) figure 2, transient thermal impedance model figure 3, low voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds(on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on) , drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) typical performance curves 024681 01 2 012345 67891 0 01 02 03 04 05 06 0 25 50 75 100 125 150 -50 0 50 100 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 5040 30 20 10 0 1.401.30 1.20 1.10 1.00 0.90 0.80 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 1.21.1 1.0 0.9 0.8 0.7 0.6 100 9080 70 60 50 40 30 20 10 0 3530 25 20 15 10 50 3.02.5 2.0 1.5 1.0 0.5 0 i d = 17a v gs = 10v 050-7147 rev f 6-2006 v gs =10v v gs =20v t j = +125c t j = +25c t j = -55c v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle normalized to v gs = 10v @ 17a 0.117 0.183 0.00828 0.174 dissipated power (watts) t j (c) t c (c) z ext are the external thermal impedances: case to sink,sink to ambient, etc. set to zero when modeling only the case to junction. z ext downloaded from: http:///
apt34n80b2c3 _lc3 (g) c rss c iss c oss v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 01 02 03 04 05 0 0 50 100 150 200 250 300 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1612 84 0 t j =+150c t j =+25c v ds = 400v v ds = 160v v ds = 640v i d = 34a 20,00010,000 1000 100 10 200100 10 1 typical performance curves 050-7147 rev f 6-2006 i d (a) i d (a) figure 14, delay times vs current figure 15, rise and fall times vs current i d (a) r g , gate resistance (ohms) figure 16, switching energy vs current figure 17, switching energy vs. gate resistance v dd = 533v r g = 5 ? t j = 125c l = 100h e on e off t r t f switching energy ( j) t d(on) and t d(off) (ns) switching energy ( j) t r and t f (ns) 0 10 20 30 40 50 60 0 10 20 30 40 50 60 01 02 03 04 05 06 0 051 01 52 02 53 03 54 04 55 0 v dd = 533v i d = 34a t j = 125c l = 100h e on includes diode reverse recovery. t d(on) t d(off) e on e off 180160 140 120 100 8060 40 20 0 20001500 1000 500 0 v dd = 533v r g = 5 ? t j = 125c l = 100h v dd = 533v r g = 5 ? t j = 125c l = 100h e on includes diode reverse recovery. 9080 70 60 50 40 30 20 10 0 40003500 3000 2500 2000 1500 1000 500 0 graph removed downloaded from: http:///
apt34n80b2c3 _lc3 (g) 050-7147 rev f 6-2006 t j = 125 c 90% drain voltage gate voltage drain current 0 90% t d(off) 10% t f switching energy figure 18, turn-on switching waveforms and definitions figure 19, turn-off switching waveforms and definitions i c d.u.t. apt15df100 v ce figure 20, inductive switching test circuit v dd g t j = 125 c drain voltage gate voltage drain current 10 % t d(on) 10 % 5 % 5 % 90% t r switching energy 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 5.45 (.215) bsc 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) drain source gate these dimensions are equal to the to-247 without the mounting hole. drain 2-plcs. 19.51 (.768)20.50 (.807) 19.81 (.780)21.39 (.842) 25.48 (1.003)26.49 (1.043) 2.29 (.090)2.69 (.106) 0.76 (.030)1.30 (.051) 3.10 (.122)3.48 (.137) 4.60 (.181)5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019)0.84 (.033) drain source gate dimensions in millimeters and (inches) drain 2.29 (.090)2.69 (.106) 5.79 (.228)6.20 (.244) 2.79 (.110)3.18 (.125) 5.45 (.215) bsc 2-plcs. dimensions in millimeters and (inches) t-max tm (b2) package outline to-264 (l) package outline e3 100% sn plated e1 sac: tin, silver, copper downloaded from: http:///
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